Amorphous Silicon and Carbon Nanotubes Layered Thin-Film Based Device for Temperature Sensing Application

This paper proposes an integrated layered doped and undoped amorphous silicon thin-film based temperature sensing device. Temperature performance has been measured for thin film p-i-n (p-type- intrinsic-n-type) configuration-based diode. Linear dependency of voltage on the forward-biased diode at a constant bias current is demonstrated in range 30 - 200 °C. Further, same device introduced with double-walled carbon nanotubes (DWCNTs) to improve linearity sensor. Comparative two configurations p-i-n/DWCNTs application studied. Moreover, this discussed effect DWCNTs sensor parameters such as sensitivity, S coefficient determination, R 2 . The maximum sensitivity sensor, 22.34 mV/ °C configured 21.06 mV/°C configuration biasing 10- 60 mA have found. We achieved value determination equal 0.99889 0.99922